bc556 thru bc558 vishay semiconductors formerly general semiconductor document number 88161 www.vishay.com 09-may-02 1 small signal transistors (pnp) features ?pnp silicon epitaxial planar transistors for switch- ing and af amplifier applications. ?these transistors are subdivided into three groups a, b, and c according to their current gain. the type bc556 is available in groups a and b, however, the types bc557 and bc558 can be supplied in all three groups. as complementary types, the npn transistors bc546...bc548 are recommended. ?on special request, these transistors are also manufactured in the pin configuration to-18. mechanical data case: to-92 plastic package weight: approx. 0.18g packaging codes/options: e6/bulk 5k per container, 20k/box e7/4k per ammo mag., 20k/box maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit bc556 80 collector-base voltage bc557 v cbo 50 v bc558 30 bc556 80 collector-emitter voltage bc557 v ces 50 v bc558 30 bc556 65 collector-emitter voltage bc557 v ceo 45 v bc558 30 emitter-base voltage v ebo 5v collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 ma peak emitter current i em 200 ma power dissipation at t amb = 25 cp tot 500 (1) mw thermal resistance junction to ambient air r ja 250 (1) c/w junction temperature t j 150 c storage temperature range t s 65 to +150 c note: (1) valid provided that leads are kept at ambient temperature at a distance of 2mm from case. 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) 0.098 (2.5) max. ? 0.022 (0.55) bottom view to-226aa (to-92) dimensions in inches and (millimeters)
bc556 thru bc558 vishay semiconductors formerly general semiconductor www.vishay.com document number 88161 2 09-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit current gain group a v ce = 5v, i c = 2ma, 220 small signal current gain b h fe f = 1 khz 330 c 600 current gain group a v ce = 5v, i c = 2ma, 1.6 2.7 4.5 input impedance b h ie f = 1khz 3.2 4.5 8.5 k ? c 6 8.7 15 current gain group a v ce = 5v, i c = 2ma, 18 30 output admittance b h oe f = 1khz 30 60 s c 60 110 current gain group a v ce = 5v, i c = 2ma, 1.5 10 -4 reverse voltage transfer ratio b h re f = 1khz 2 10 -4 c 3 10 -4 current gain group a 90 b v ce = 5v, i c = 10 a 150 c 270 current gain group a 110 180 220 dc current gain b h fe v ce = 5v, i c = 2ma 200 290 450 c 420 500 800 current gain group a 120 b v ce = 5v, i c = 100ma 200 c 400 collector saturation voltage v cesat i c = 10ma, i b = 0.5ma 80 300 mv i c = 100ma, i b = 5ma 250 650 base saturation voltage v besat i c = 10ma, i b = 0.5ma 700 mv i c = 100ma, i b = 5ma 900 base-emitter voltage v be v ce = 5v, i c = 2ma 600 660 750 mv v ce = 5v, i c = 10ma 800 bc556 v ce = 80v 0.2 15 na collector-emitter bc557 v ce = 50v 0.2 15 na cutoff current bc558 i ces v ce = 30v 0.2 15 na bc556 v ce = 80v, t j = 125 c 4 a bc557 v ce = 50v, t j = 125 c 4 a bc558 v ce = 30v, t j = 125 c 4 a gain-bandwidth product f t v ce = 5v, i c = 10ma, 150 mhz f = 100mhz collector-base capacitance c cbo v cb = 10v, f = 1mhz 6pf v ce = 5v, i c = 200 a, noise figure bc556, bc557, bc558 f r g = 2k ? , f = 1khz, 210db ? f = 200hz
bc556 thru bc558 vishay semiconductors formerly general semiconductor document number 88161 www.vishay.com 09-may-02 3 ratings and characteristic curves (t a = 25 c unless otherwise noted) c
bc556 thru bc558 vishay semiconductors formerly general semiconductor www.vishay.com document number 88161 4 09-may-02 ratings and characteristic curves (t a = 25 c unless otherwise noted) relative h-parameters versus collector current 10 1 10 1 -i c 10 ma 10 2 6 4 2 6 4 2 6 4 2 -1 10 -1 24 24 h (-i = 2 ma) e c h (-i ) e c h ie h oe h re h fe -v = 5 v ce t = 25 c amb
bc556 thru bc558 vishay semiconductors formerly general semiconductor document number 88161 www.vishay.com 09-may-02 5 ratings and characteristic curves (t a = 25 c unless otherwise noted)
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